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BDW84C Datenblatt(PDF) 1 Page - STMicroelectronics

Teilenummer BDW84C
Bauteilbeschribung  COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
PDF  4 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
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BDW84C Datenblatt(HTML) 1 Page - STMicroelectronics

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BDW83C
BDW84C
COMPLEMENTARY SILICON POWER DARLINGTON
TRANSISTORS
s
BDW83C IS A SGS-THOMSON PREFERRED
SALESTYPE
s
COMPLEMENTARY PNP - NPN DEVICES
s
HIGH CURRENT CAPABILITY
s
FAST SWITCHING SPEED
s
HIGH DC CURRENT GAIN
APPLICATIONS
s
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDW83C is a silicon epitaxial-base NPN
power monolithic Darlington transistor mounted in
Jedec TO-218 plastic package. It is intended for
use in power linear and switching applications.
The complementary type is BDW84C.
INTERNAL SCHEMATIC DIAGRAM
June 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN
BDW83C
PNP
BDW84C
VCBO
Collector-Base Voltage (IE = 0)
100
V
VCEO
Collector-Emitter Voltage (IB = 0)
100
V
VEBO
Emitter-Base Voltage (IC = 0)
5
V
IC
Collector Current
15
A
ICM
Collector Peak Current
40
A
IB
Base Current
0.5
A
Ptot
Total Dissipation at Tc
≤ 25 oC
130
W
Tstg
Storage Temperature
-65 to 150
oC
Tj
Max. Operating Junction Temperature
150
oC
1
2
3
TO-218
1/4


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