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BDW84C Datenblatt(PDF) 2 Page - STMicroelectronics

Teilenummer BDW84C
Bauteilbeschribung  COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
PDF  4 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BDW84C Datenblatt(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
Rthj-case
Thermal Resistance Junction-case
Max
0.96
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-off
Current (IE = 0)
VCB = 100 V
VCB = 100 V
Tcase = 150
oC
500
5
µA
mA
ICEO
Collector Cut-off
Current (IB = 0)
VCE = 40 V
1
mA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 5 V
2
mA
VCEO(sus)
∗ Collector-Emitter
Sustaining Voltage
IC = 30 mA
100
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 6 A
IB = 12 mA
IC = 15 A
IB = 150 mA
2.5
4
V
VBE(on)
∗ Base-Emitter Voltage
IC = 6 A
VCE = 3 A
2.5
V
hFE
∗
DC Current Gain
IC = 6 A
VCE =3 V
IC = 15 A
VCE =3 V
750
100
20000
Vf*
Diode Forward Voltage
IF = 10 A
4
V
ton
toff
Turn-on Time
Turn-off Time
VCC = 30 V
IC = 10 A
RB1 = 300
Ω
RB2 = 150
Ω
IB1 = - IB2 = 40 mA
0.9
6
µs
µs
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
BDW83C / BDW84C
2/4



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