5 Specifications

5.1 Absolute Maximum Ratings

over recommended operating case temperature range (unless otherwise noted)(1)

MIN

MAX

UNIT

VCC

Logic supply voltage(2)

7

V

VI

Logic input voltage range

-0.3

7

V

VDS

Power DMOS drain-to-source voltage(3)

50

V

Continuous source-drain diode anode current

1

A

Pulsed source-drain diode anode current(4)

2

A

IDN

Pulsed drain current, each output, all outputs on(4)

TA = 25°C

1.1

A

IDN

Continuous drain current, each output, all outputs on

TA = 25°C

350

A

Peak drain current, single output(4)

TA = 25°C

1.1

A

EAS

Single-pulse avalanche energy (see Figure 6-6)

75

mJ

IAS

Avalanche current(5)

600

mA

Continuous total dissipation

See Section 5.2

TC

Operating case temperature range

-40

125

℃

TJ

Operating virtual junction temperature range

-40

150

℃

Tstg

Storage temperature range

-65

150

℃

Lead temperature 1,6mm (1/16 inch) from case for 10 seconds

260

℃

(1)

Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating

conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage values are with respect to LGND and PGND.

(3)

Each power DMOS source is internally connected to PGND.

(4)

Pulse duration ≤ 100µs and duty cycle ≤ 2%.

(5)

DRAIN supply voltage = 15V, starting junction temperature (TJS) = 25°C, L = 210mH, IAS = 600mA (see Figure 6-6).

5.2 Dissipation Rating Table

PACKAGE

TC ≤ 25°C

POWER RATING

DERATING FACTOR

ABOVE TC = 25°C

TC = 125°C

POWER RATING

DW

1750mW

14mW/°C

350mW

NE

2500mW

20mW/°C

500mW

5.3 Recommended Operating Conditions

MIN

MAX

UNIT

VCC

Logic supply voltage

4.5

5.5

V

VIH

High-level input voltage

0.85 VCC

VCC

V

VIL

Low-level input voltage

0

0.15 VCC

V

Pulsed drain output current, TC = 25°C, VCC = 5V(1) (2)

−1.8

0.6

A

tsu

Setup time, SER IN high before SRCK↑ (seeFigure 6-2)

10

ns

th

Hold time, SER IN high after SRCK↑ (seeFigure 6-2)

10

ns

tw

Pulse duration (see Figure 6-2)

20

ns

TC

Operating case temperature

−40

125

°C

(1)

Pulse duration ≤ 100µs and duty cycle ≤ 2%.

(2)

Technique should limit TJ− TC to 10°C maximum.

TPIC6A595

SLIS005C – APRIL 1993 – REVISED MARCH 2025

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