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FN8808 Datenblatt(PDF) 41 Page - Renesas Technology Corp

Teilenummer FN8808
Bauteilbeschribung  2-Phase Boost Controller with Integrated Drivers
PDF  44 Pages
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Hersteller  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

FN8808 Datenblatt(HTML) 41 Page - Renesas Technology Corp

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ISL78227
FN8808 Rev.6.02
Page 41 of 43
Feb 28, 2025
Layout Considerations
For DC/DC converter design, the PCB layout is very important to
ensure the desired performance.
1. Place input ceramic capacitors as close as possible to the IC's
VIN and PGND/SGND pins.
2. Place the output ceramic capacitors as close as possible to
the power MOSFETs. Keep this loop (output ceramic capacitor
and MOSFETs for each phase) as small as possible to reduce
voltage spikes induced by the trace parasitic inductances
when MOSFETs switching ON and OFF.
3. Place the output aluminum capacitors close to the power
MOSFETs.
4. Keep the phase node copper area small, but large enough to
handle the load current.
5. Place the input aluminum and some ceramic capacitors close
to the input inductors and power MOSFETs.
6. Place multiple vias under the bottom pad of the IC. Connect
the bottom pad to the ground copper plane with as large an
area as possible in multiple layers to effectively reduce the
thermal impedance. Figure 67 shows the layout example for
vias in the IC bottom pad.
7. Place the 10µF decoupling ceramic capacitor at the PVCC pin
and as close as possible to the IC. Put multiple vias close to
the ground pad of this capacitor.
8. Place the 1µF decoupling ceramic capacitor at the VCC pin
and as close as possible to the IC. Put multiple vias close to
the ground pad of this capacitor.
9. Keep the bootstrap capacitors as close as possible to the IC.
10. Keep the driver traces as short as possible and with relatively
large width (25 mil to 40 mil is recommended), and avoid
using via or minimal number of vias in the driver path to
achieve the lowest impedance.
11. Place the current sense setting resistors and the filter
capacitors (shown as RSETxB, RBIASxB, and CISENx in
Figure 60 on page 31) as close as possible to the IC. Keep
each pair of the traces close to each other to avoid undesired
switching noise injections.
12. The current-sensing traces must be laid out very carefully
because they carry tiny signals with only tens of mV.
For the current-sensing traces close to the power sense
resistor (RSENx), the layout pattern shown in Figure 68 is
recommended. Assuming the RSENx is placed in the top layer
(red), route one current sense connection from the middle of
one RSENx pad in the top layer under the resistor (red trace).
For the other current-sensing trace, from the middle of the
other pad on RSENx in the top layer, after a short distance, via
down to the second layer and route this trace right under the
top layer current sense trace.
13. Keep the current-sensing traces far from the noisy traces such
as gate driving traces (LGx, UGx, and PHx), phase nodes in
power stage, BOOTx signals, output switching pulse currents,
driving bias traces, and input inductor ripple current signals,
etc.
FIGURE 67. RECOMMENDED LAYOUT PATTERN FOR VIAS IN THE
IC BOTTOM PAD
FIGURE 68. RECOMMENDED LAYOUT PATTERN FOR CURRENT
SENSE TRACES REGULATOR



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