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LPV811DBVT Datenblatt(PDF) 4 Page - Texas Instruments

Teilenummer LPV811DBVT
Bauteilbeschribung  LPV811/LPV812 Precision 425 nA Nanopower Operational Amplifiers
PDF  31 Pages
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Hersteller  TI2 [Texas Instruments]
Direct Link  https://www.ti.com
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LPV811, LPV812
SNOSD33B – NOVEMBER 2016 – REVISED NOVEMBER 2016
www.ti.com
Submit Documentation Feedback
Copyright © 2016, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
Not to exceed -0.3V or +6.0V on ANY pin, referred to V-
(3)
Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.3 V beyond the supply rails should
be current-limited to 10 mA or less.
(4)
Short-circuit to Vs/2, one amplifier per package. Continuous short circuit operation at elevated ambient temperature can result in
exceeding the maximum allowed junction temperature of 150°C.
6 Specifications
6.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
Supply voltage, Vs = (V+) - (V-)
–0.3
6
V
Input pins
Voltage (2) (3)
Common mode
(V-) - 0.3
(V+) + 0.3
V
Differential
(V-) - 0.3
(V+) + 0.3
V
Input pins
Current
-10
10
mA
Output short
current (4)
Continuous
Continuous
Storage temperature, Tstg
–65
150
°C
Junction temperature
150
°C
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 500-V HBM is possible with the necessary precautions. Pins listed as ±2000 V may actually have higher performance.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 250-V CDM is possible with the necessary precautions. Pins listed as ±750 V may actually have higher performance.
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±1000
V
Charged-device model (CDM), per JEDEC specification JESD22-
C101(2)
±250
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
Supply voltage (V+ – V–)
1.6
5.5
V
Specified temperature
-40
125
°C
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
6.4 Thermal Information
THERMAL METRIC(1)
LPV811
DBV
(SOT-23)
5 PINS
LPV812
DGK
(VSSOP)
8 PINS
UNIT
θJA
Junction-to-ambient thermal resistance
177.4
177.6
ºC/W
θJCtop
Junction-to-case (top) thermal resistance
133.9
68.8
θJB
Junction-to-board thermal resistance
36.3
98.2
ψJT
Junction-to-top characterization parameter
23.6
12.3
ψJB
Junction-to-board characterization parameter
35.7
96.7



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