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TLV702-Q1

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SLVSC35D – AUGUST 2013 – REVISED JULY 2019

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Copyright © 2013–2019, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltages are with respect to network ground terminal.

(3)

The absolute maximum rating is VIN + 0.3 V or 6.0 V, whichever is smaller.

6 Specifications

6.1 Absolute Maximum Ratings

over operating junction temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

Voltage(2)

IN

–0.3

6

V

EN

–0.3

6(3)

V

OUT

–0.3

6

V

Current (source)

OUT

Internally limited

A

Output short-circuit duration

Indefinite

Temperature

Operating virtual junction, TJ

–55

150

°C

Storage, Tstg

–55

150

°C

(1)

AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per AEC Q100-002(1)

±2000

V

Charged-device model (CDM), per AEC Q100-011

±750

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VIN

Input voltage

2

5.5

V

VOUT

Output voltage

1.2

4.8

V

IOUT

Output current

0

300

mA

TA

Ambient temperature

–40

125

°C

TJ

Operating virtual junction temperature

–40

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.4 Thermal Information

THERMAL METRIC(1)

TLV702-Q1

UNIT

DDC (SOT)

DBV (SOT)

DSE (WSON)

5 PINS

5 PINS

6 PINS

RθJA

Junction-to-ambient thermal resistance

262.8

249.2

321.3

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

68.2

136.4

207.9

°C/W

RθJB

Junction-to-board thermal resistance

81.6

85.9

281.5

°C/W

ψJT

Junction-to-top characterization parameter

1.1

19.5

42.4

°C/W

ψJB

Junction-to-board characterization parameter

80.9

85.3

284.8

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

N/A

142.3

°C/W