ISO7730FDWR datasheet(34/50 Pages) TI2

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9 Device and Documentation Support

9.1 Documentation Support

9.1.1 Related Documentation

For related documentation, see the following:

• Texas Instruments, Digital Isolator Design Guide

• Texas Instruments, Isolation Glossary

• Texas Instruments, How to use isolation to improve ESD, EFT, and Surge immunity in industrial systems

application report

• Texas Instruments, SN6501 Transformer Driver for Isolated Power Supplies data sheet

• Texas Instruments, SNx5HVD308xE Low-Power RS-485 Transceivers, Available in a Small MSOP-8

Package data sheet

• Texas Instruments, TPS76350 Low-Power 150-mA Low-Dropout Linear Regulators data sheet

• Texas Instruments, MSP430F2132 Mixed Signal Microcontroller data sheet

9.2 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper

right corner, click on Alert me to register and receive a weekly digest of any product information that has

changed. For change details, review the revision history included in any revised document.

9.3 Support Resources

TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight

from the experts. Search existing answers or ask your own question to get the quick design help you need.

Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do

not necessarily reflect TI's views; see TI's Terms of Use.

9.4 Trademarks

TI E2E™ is a trademark of Texas Instruments.

All trademarks are the property of their respective owners.

9.5 Electrostatic Discharge Caution

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled

with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may

be more susceptible to damage because very small parametric changes could cause the device not to meet its published

specifications.

9.6 Glossary

TI Glossary

This glossary lists and explains terms, acronyms, and definitions.

10 Revision History

NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision J (October 2024) to Revision K (September 2025)

Page

• Added Low-level input current for INx and High-level Input current for ENx throughout the Specifications ......4

Changes from Revision I (August 2023) to Revision J (October 2024)

Page

• Updated the numbering format for tables, figures, and cross-references throughout the document................. 1

• Updated distance through isolation, while maintaining other insulation specifications.......................................7

• Updated the input leakage current for ENx pins throughout the electrical characteristic sections .................. 11

ISO7730, ISO7731

SLLSES0K – SEPTEMBER 2016 – REVISED SEPTEMBER 2025

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