STPS1L30AFN datasheet(4/15 Pages) STMICROELECTRONICS

4 / 15 page

Figure 5. Relative variation of thermal impedance junction

to ambient versus pulse duration (SMA)

/ R

th(j-a)

0.01

0.10

1.00

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

Single pulse

SMA

t (s)

Figure 6. Reverse leakage current versus reverse voltage

applied (typical values)

I (mA)

1.E-3

1.E-2

1.E-1

1.E+0

1.E+1

1.E+2

V (V)

T =150°C

T =25°C

T =100°C

T =125°C

Figure 7. Junction capacitance versus reverse voltage

applied (typical values)

C(pF)

100

500

V (V)

F=1MHz

=30mV

T =25°C

OSC

RMS

Figure 8. Forward voltage drop versus forward current

(typical values, high level)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.10

1.00

10.00

I (A)

V (V)

T =25°C

T =150°C

T =100°C

Figure 9. Forward voltage drop versus forward current

(maximum values, low level)

0.10

0.15

0.20

0.25

0.30

0.35

0.40

0.45

0.50

0.55 0.60

0.0

0.5

1.0

1.5

2.0

2.5

3.0

I (A)

V (V)

T =25°C

Tj =150°C

T =125°C

T =100°C

Figure 10. Thermal resistance junction to ambient versus

copper surface under each lead (SMB)

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

(°C/W)

th(j-a)

SMB

S(Cu)(cm²)

Epoxy p ri nted ci rcuit board FR4, coppe r t hickness: 35 µm

STPS1L30

Characteristics (curves)

DS1243 - Rev 8

page 4/15

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