8.3.5 Ultra-Low Leakage Current

The TMUX110x devices provide extremely low on-leakage and off-leakage currents. The TMUX110x devices

are capable of switching signals from high source-impedance inputs into a high input-impedance op amp with

minimal offset error because of the ultra-low leakage currents. Figure 8-1 shows typical leakage currents of the

TMUX110x devices versus temperature at VDD = 5V.

Temperature (qC)

-40

-20

0

20

40

60

80

100

120

-2

-1.5

-1

-0.5

0

0.5

1

1.5

2

D008

IOFF

ION

Figure 8-1. Leakage Current vs Temperature

8.3.6 Ultra-Low Charge Injection

The TMUX110x devices have a transmission gate topology, as shown in Figure 8-2. Any mismatch in the stray

capacitance associated with the NMOS and PMOS causes an output level change whenever the switch is

opened or closed.

The TMUX110x devices have special charge-injection cancellation circuitry that reduces the source-to-drain

charge injection to -1.5pC at VS = 1V as shown in Figure 8-3.

S

D

C

GDP

C

GDN

C

GSN

C

GSP

OFF

ON

OFF ON

Figure 8-2. Transmission Gate Topology

VS - Source Voltage (V)

0

1

2

3

4

5

-20

-15

-10

-5

0

5

10

15

20

D011

VDD = 3.3 V

VDD = 5 V

Figure 8-3. Charge Injection vs Source Voltage

TMUX1101, TMUX1102

SCDS410D – MARCH 2019 – REVISED FEBRUARY 2024

www.ti.com

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