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H30N3FA Datenblatt(PDF) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd.

Teilenummer H30N3FA
Bauteilbeschribung  30V Trench Single N-Channel MOSFET
PDF  6 Pages
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Hersteller  HUIXIN [Guangdong Huixin Electronic Technology Co., Ltd.]
Direct Link  http://www.hxkj.hk
Logo HUIXIN - Guangdong Huixin Electronic Technology Co., Ltd.

H30N3FA Datenblatt(HTML) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd.

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Rev.01
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Electrical Characteristics ( TJ= 25℃ unless otherwise specified)
Symbol
Parameter
Min.
Typ. Max. Units
Test Conditions
V(BR)DSS Drain- Source Breakdown Voltage
30
--
--
V
VGS=0V,ID=250µA
IDSS
Zero Gate Voltage Drain Current (25℃)
--
--
1
µA
VDS=30V,VGS=0V
IGSS
Gate to Source Forward Leakage
--
--
100
nA
VGS=20V ,VDS=0V
Gate to Source Reverse Leakage
--
--
-100
VGS=-20V ,VDS=0V
VGS(TH) Gate Threshold Voltage
1.0
1.7
2.2
V
VGS=VDS,ID=250µA
RDS(on) Static Drain- to- Source On-
Resistance(Note*2)
--
6.2
8.2
mΩ
VGS=10V,ID=15A
--
10
13.5
mΩ
VGS=4.5V,ID=15A
Dynamic Electrical Characteristics
Ciss
Input Capacitance
--
1060
--
pF
VGS=0V
VDS=15V
f=1MHz
Coss
Output Capacitance
--
122
Crss
Reverse Transfer Capacitance
--
102
--
Rg
Gate Resistance
--
3
--
Ω
f=1MHz
Qg
Total Gate Charge
--
21
nC
VDS=15V
ID=30A
VGS=10V
Qgs
Gate- to- Source Charge
--
3
--
Qgd
Gate-to-Drain(" Miller") Charge
--
5
--
Switching Characteristics
td(ON)
Turn- on Delay Time
--
4
--
nS
VDS=15V
ID=30A
RL=1.6Ω
VGS=10V
trise
Rise Time
--
2
--
td(OFF) Turn- OFF Delay Time
--
13
--
tfall
Fall Time
--
7
--
Source- Drain Diode Characteristics
VSD
Diode Forward Voltage
--
--
1.2
V
IF=10A,VGS=0V
trr
Reverse Recovery Time
--
12
--
nS
VR=15V,IF=10A
di/dt=100A/µs
Qrr
Reverse Recovery Charge
--
15
--
nC
Notes:
* 1. Repetitive rating, pulse width limited by maximum junction temperature.
* 2. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%



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