H30N3FA datasheet(3/6 Pages) HUIXIN

Teilenummer	H30N3FA

Bauteilbeschribung	30V Trench Single N-Channel MOSFET

PDF	6 Pages

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Hersteller	HUIXIN [Guangdong Huixin Electronic Technology Co., Ltd.]

Direct Link	http://www.hxkj.hk

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3 / 6 page

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Rev.01

Page 3 of 6

Typical Characteristics

0.1

100

1000

10000

Figure 3. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

VDS Drain-to-Source Voltage (V)

Qg Gate Charge (nC)

2.5 V

4.5 V

10V

TC=25℃

impulse=250uS

Note：TJ=25℃

VGS=4.5V

25℃

VGS= 0V

Coss

Ciss

Crss

Note:

VGS=0V,

f=1Mhz

C iss = C gs + C gd (C ds = shorted)

C oss = C ds + C gd

C rss = C gd

Note:

VDS=15V,

ID=15A

25℃

VGS=10V

3.5V

Figure 1. On-Region Characteristics

Figure 4. Transfer Characteristics

Figure 2. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 5. Body Diode Forward Voltage

Variation vs Source Current

Vds Drain-Source Voltage (V)

Vgs Gate-Source Voltage (V)

ID - Drain Current (A)

VF ,Forward Voltage [V]

0.3

0.6

0.9

1.2

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