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H30T65DC Datenblatt(PDF) 1 Page - Guangdong Huixin Electronic Technology Co., Ltd.

Teilenummer H30T65DC
Bauteilbeschribung  Trench Gate IGBT
PDF  9 Pages
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Hersteller  HUIXIN [Guangdong Huixin Electronic Technology Co., Ltd.]
Direct Link  http://www.hxkj.hk
Logo HUIXIN - Guangdong Huixin Electronic Technology Co., Ltd.

H30T65DC Datenblatt(HTML) 1 Page - Guangdong Huixin Electronic Technology Co., Ltd.

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+86-769-22857832
huixin@hx kj.hk
Rev.01
Page 1 of 9
H30T65DC
Trench Gate IGBT
Features:
• 650V trench gate/field termination process
• Very low Vce(sat)
• Low switching loss
• Positive temperature coefficient in Vce(sat)
•
Lead Free
Applications:
• EV Charging
• Uninterruptible Power Supply (UPS)
• Inverters
• Load Switch
Ordering Information
Part Number
Package
Marking
Packing
Qty.
H30T65DC
T0-263
H30T65DC
Tube
800 PCS
Absolute Maximun Ratings (Tc= 2 5℃ unless otherwise specified)
Symbol
Parameter
Rating
Units
VCES
Collector-Emitter Voltage
650
V
VGES
Gate- Emitter Voltage
±30
V
IC
Continuous DC collector current TC = 25 °C
60
A
Continuous DC collector current TC = 100 °C
30
ICm
Pulsed collector current TC = 25°C
90
A
IF
Diode Continuous Forward Current TC = 25 °C
60
A
Diode Continuous Forward Current TC = 100 °C
30
IFm
Diode Maximum Forward Current TC = 25°C
90
A
PD
Total Power Dissipation @ TC = 25°C
150
W
Tstg
Operating Junction and Storage Temperature Range
-55 to175
°C
TL
Maximum Temperature for Soldering
260
°C
VCES
Vce(sat )
IF
650V
1.65V
30A


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