LET8180 datasheet(1/4 Pages) STMICROELECTRONICS

Teilenummer	LET8180

Bauteilbeschribung	RF POWER TRANSISTORS Ldmos Enhanced Technology

PDF	4 Pages

Scroll/Zoom	100%

Hersteller	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

Logo

1 / 4 page

1/4

TARGET DATA

January, 28 2003

LET8180

RF POWER TRANSISTORS

Ldmos Enhanced Technology

N-CHANNEL ENHANCEMENT-MODE LATERAL

MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION,

PUSH-PULL

• POUT = 220 W with 17 dB TYP. gain @ 860 MHz

• BeO FREE PACKAGE

• INTERNAL INPUT MATCHING

• ESD PROTECTION

DESCRIPTION

The LET8180 is a common source N-Channel

enhancement-mode lateral Field-Effect RF power

transistor designed for broadband commercial and

industrial applications at frequencies up to 1.0

GHz. The LET8180 is designed for high gain and

broadband performance operating in common

source mode at 32 V. Its internal matching makes

it ideal for base station applications requiring high

linearity.

PIN CONNECTION

1

3

5

2

1. Drain

2. Drain

3. Source

4. Gate

5. Gate

4

M252

epoxy sealed

ORDER CODE

LET8180

BRANDING

LET8180

ABSOLUTE MAXIMUM RATINGS (TCASE = 25

°C)

Symbol

Parameter

Value

Unit

V(BR)DSS

Drain-Source Voltage

65

V

VGS

Gate-Source Voltage

-0.5 to +15

V

ID

Drain Current

18

A

PDISS

Power Dissipation (@ Tc =+70 °C)

289

W

Tj

Max. Operating Junction Temperature

200

°C

TSTG

Storage Temperature

-65 to +150

°C

THERMAL DATA

Rth(j-c)

Junction -Case Thermal Resistance

0.45

°C/W

Ähnliche Beschreibung - LET8180

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
STMicroelectronics	LET19060C	34Kb / 4P	RF POWER TRANSISTORS Ldmos Enhanced Technology 24-Jan-2003
	LET20030C	37Kb / 5P	RF POWER TRANSISTORS Ldmos Enhanced Technology 24-Jan-2003
	LET20030S	43Kb / 4P	RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package 27-Feb-2003
	LET21008	40Kb / 4P	RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package 15-Apr-2003
	LET21030C	62Kb / 4P	RF POWER TRANSISTORS Ldmos Enhanced Technology 24-Jan-2003
	LET9006	40Kb / 4P	RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package 15-Apr-2003
	LET9045S	292Kb / 9P	RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package 27-Feb-2003
	LET9060C	36Kb / 5P	RF POWER TRANSISTORS Ldmos Enhanced Technology 04-Nov-2002
	LET9085	35Kb / 4P	RF POWER TRANSISTORS Ldmos Enhanced Technology 28-Jan-2003
	LET9130	57Kb / 6P	RF POWER TRANSISTORS Ldmos Enhanced Technology 06-Feb-2003

More results

LET8180 Datenblatt(PDF) 1 Page - STMicroelectronics

LET8180 Datenblatt(HTML) 1 Page - STMicroelectronics

Ähnliche Teilenummer - LET8180

Ähnliche Beschreibung - LET8180

Html Pages

1 2 3 4

Datenblatt Download

Link URL