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AT25DF021A-UUN-T Datenblatt(PDF) 40 Page - Renesas Technology Corp

Teilenummer AT25DF021A-UUN-T
Bauteilbeschribung  2-Mbit, 1.65 V Minimum SPI Serial Flash Memory with Dual-I/O Support
PDF  59 Pages
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Hersteller  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

AT25DF021A-UUN-T Datenblatt(HTML) 40 Page - Renesas Technology Corp

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DS-AT25DF021A-042 Rev. L
Page 40
8/7/23
© 2023 Renesas Electronics
AT25DF021A Datasheet
12.4 Ultra-Deep Power-Down
The Ultra-Deep Power-Down mode allows the device to further reduce its energy consumption compared to the
existing standby and Deep Power-Down modes by shutting down additional internal circuitry. When the device is
in the Ultra-Deep Power-Down mode, all commands including the Status Register Read and Resume from Deep
Power-Down commands are ignored. Since all commands are ignored, the mode can be used as an extra
protection mechanism against inadvertent or unintentional program and erase operations. Entering the Ultra-Deep
Power-Down mode is done by simply asserting the CS pin, clocking in the opcode 79h, and then deasserting the
CS pin. Any additional data clocked into the device after the opcode is ignored. When the CS pin is deasserted,
the device enters the Ultra-Deep Power-Down mode within the maximum time of tEUDPD
The complete opcode must be clocked in before the CS pin is deasserted; otherwise, the device stops the
operation and return to the standby mode once the CS pin is deasserted. Also, the device defaults to the standby
mode after a power cycle. The Ultra-Deep Power-Down command is ignored if an internally self-timed operation
such as a program or erase cycle is in progress.
Figure 33. Ultra-Deep Power-Down
SCK
CS
SI
SO
MSB
ICC
23
1
0
0
67
5
4
Opcode
High-Impedance
Ultra-Deep Power-Down Mode Current
Active Current
Standby Mode Current
tEUDPD
1111001



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