M58LR128KB datasheet(1/110 Pages) NUMONYX

Teilenummer	M58LR128KB

Bauteilbeschribung	128 or 256 Mbit (횞16, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories

PDF	110 Pages

Scroll/Zoom	100%

Hersteller	NUMONYX [Numonyx B.V]

Direct Link	http://www.numonyx.com

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1 / 110 page

Preliminary Data

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

March 2008

Rev 3

1/111

1

M58LR128KT M58LR128KB

M58LR256KT M58LR256KB

128 or 256 Mbit (×16, multiple bank, multilevel interface, burst)

1.8 V supply Flash memories

Features

■ Supply voltage

–VDD = 1.7 V to 2.0 V for program, erase and

read

–VDDQ = 1.7 V to 2.0 V for I/O buffers

–VPP = 9 V for fast program

■ Synchronous/asynchronous read

– Synchronous burst read mode:

54 MHz, 66 MHz

– Asynchronous page read mode

– Random access: 70 ns, 85 ns

■ Synchronous burst read suspend

■ Programming time

– 2.5 µs typical word program time using

Buffer Enhanced Factory Program

command

■ Memory organization

– Multiple bank memory array:

8 Mbit banks for the M58LR128KT/B

16 Mbit banks for the M58LR256KT/B

– Parameter blocks (top or bottom location)

■ Dual operations

– Program/erase in one bank while read in

others

– No delay between read and write

operations

■ Block locking

– All blocks locked at power-up

– Any combination of blocks can be locked

with zero latency

–WP for block lock-down

– Absolute write protection with VPP = VSS

■ Security

– 64 bit unique device number

– 2112 bit user programmable OTP cells

■ Common Flash interface (CFI)

■ 100 000 program/erase cycles per block

■ Electronic signature

– Manufacturer code: 20h

– Top device codes:

M58LR128KT: 88C4h

M58LR256KT: 880Dh

– Bottom device codes

M58LR128KB: 88C5h

M58LR256KB: 880Eh

The M58LRxxxKT/B memories are only available as part of a multichip package.

Not packaged separately

www.numonyx.com

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