MBRB10100 datasheet(1/2 Pages) ISC

Teilenummer	MBRB10100

Bauteilbeschribung	Schottky Barrier Diode

PDF	2 Pages

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Schottky Barrier Diode

MBRB10100

www.iscsemi.com

1

FEATURES

· Guarding for Overvoltage Protection

· Metal Silicon Junction, Majority Carrier Conduction

· Low Power Loss, High Efficiency

APPLICATIONS

· Free Wheeling Diode

· High Frequency Inverters

· Polarity Protection Applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VRRM

VRWM

VR

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

100

V

IF(AV)

Average Rectified Forward Current

10

A

IFSM

Non-repetitive Peak Surge Current

(8.3ms Single Half Sine-Wave

Superimposed on Rated Load)

150

A

TJ

Max. Junction Temperature

175

℃

Tstg

Storage Temperature Range

-65~175

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

2.0

℃

/W

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