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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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AP20N02DF Datenblatt(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP20N02DF Datenblatt(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page  AP20N02DF 20V N-Channel Enhancement Mode MOSFET AP20N02DF RVE1.0 Description The AP20N02DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =20A RDS(ON) < 8.0m Ω @ VGS=10V Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP20N02DF PDFN3*3-8L AP20N02DF XXX YYYY 5000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Max. Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±12 V ID Continuous Drain Current TC = 25℃ 20 A ID Continuous Drain Current TC = 100℃ 15 A IDM Pulsed Drain Current note1 60 A EAS Single Pulsed Avalanche Energy note2 36 mJ PD Power Dissipation TC = 25℃ 31 W RθJC Thermal Resistance, Junction to Case 4.84 ℃/W TJ, TSTG Operating and Storage Temperature Range ℃ -55 to +150 永源微電子科技有限公司 |
Ähnliche Teilenummer - AP20N02DF |
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Ähnliche Beschreibung - AP20N02DF |
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