AP20N02DF

20V N-Channel Enhancement Mode MOSFET

AP20N02DF RVE1.0

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID

=250μA

20

22

-

V

IDSS

Zero Gate Voltage Drain Current

VDS=20V, VGS=0V,

-

-

1.0

μA

IGSS

Gate to Body Leakage Current

VDS=0V, VGS=±12V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID

=250μA

0.4

0.7

1.1

V

RDS(on)

Static Drain-Source on-Resistance note3

VGS=4.5V, ID=25A

-

6.1

8.0

mΩ

VGS=2.5V, ID=10A

-

8.8

13

Ciss

Input Capacitance

VDS=10V, VGS=0V,

f=1.0MHz

-

1458

-

pF

Coss

Output Capacitance

-

238

-

pF

Crss

Reverse Transfer Capacitance

-

212

-

pF

Qg

Total Gate Charge

VDS=10V, ID=25A,

VGS=4.5V

-

19

-

nC

Qgs

Gate-Source Charge

-

3

-

nC

Qgd

Gate-

Drain(“Miller”) Charge

-

6.4

-

nC

td(on)

Turn-on Delay Time

VDS=10V,

ID=10A, RGEN

=3Ω,

VGS=4.5V

-

10

-

ns

tr

Turn-on Rise Time

-

21

-

ns

td(off)

Turn-off Delay Time

-

39

-

ns

tf

Turn-off Fall Time

-

19

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

50

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

200

A

VSD

Drain to Source Diode Forward Voltage

VGS=0V, IS=30A

-

-

1.2

V

trr

Body Diode Reverse Recovery Time

IF=20A,dI/dt=100A/μs

-

25

-

ns

Qrr

Body Diode Reverse Recovery Charge

-

20

-

nC

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width .The EAS data shows Max. rating .

3、The EAS condition: TJ=25℃, VDD=16V, VG=10V, RG=0.6Ω, L=0.5mH, IAS=33A

4、The power dissipation is limited by 175℃ junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

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