AP30G10GD

30V N+P-Channel Enhancement Mode MOSFET

AP30G10GD REV1.0

永源微電子科技有限公司

P-Channel Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ. Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID=-250µA

-100

-110

-

V

lGSS

Gate-body Leakage current

VDS=0V, VGS=±20V

-

-

±100

nA

IDSS TJ=25°C

Zero Gate Voltage Drain Current

VDS=-100V, VGS = 0V

-

-

-1

μA

IDSS TJ=100°C

-

-

-100

VGS(th)

Gate-Threshold Voltage

VDS = VGS, ID = -250µA

-1.2

-1.6

-2.5

V

RDS(on)

Drain-Source On-Resistance4

VGS = -10V, ID = -10A

-

80

100

mΩ

VGS = -4.5V, ID = -6A

88

120

gfs

Forward Transconductance4

VDS = -10V, ID = -10A

-

30

-

S

Ciss

Input Capacitance

VDS = -50V, VGS = 0V,

f = 1MHz

-

3985

-

pF

Coss

Output Capacitance

-

85

-

Crss

Reverse Transfer Capacitance

-

71

-

Rg

Gate Resistance

f = 1MHz

-

4

-

Ω

Qg

Total Gate Charge

VGS = -10V, VDS = -50V,

ID= -10A

-

65

-

nC

Qgs

Gate-Source Charge

-

10.2

-

Qgd

Gate-Drain Charge

-

13

-

td(on)

Turn-On Delay Time

VGS = -10V, VDD = -50V,

RG = 3Ω, ID= -10A

-

12.8

-

ns

tr

Rise Time

-

30

-

td(off)

Turn-Off Delay Time

-

82

-

tf

Fall Time

-

61

-

trr

Body Diode Reverse Recovery Time

IF = -10A,dI/dt= 100A/µs

-

62

-

ns

Qrr

Body Diode Reverse Recovery Charge

-

56

-

nC

VSD

Diode Forward Voltage4

IS = -10A, VGS = 0V

-

-

-

-1.2

V

IS

Continuous Source Current TC= 25°C

-

-

-18

A

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is V DD =-72V,VGS =-10V,L=0.1mH,IAS =-33A

4、The power dissipation is limited by 150℃ junction temperature

5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.