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AP30G10GD Datenblatt(PDF) 6 Page - A POWER MICROELECTRONICS |
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AP30G10GD Datenblatt(HTML) 6 Page - A POWER MICROELECTRONICS |
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6 / 10 page ![]() AP30G10GD 30V N+P-Channel Enhancement Mode MOSFET AP30G10GD REV1.0 永源微電子科技有限公司 P- Typical Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Forward Characteristics of Reverse Figure 4. RDS(ON) vs. VGS Figure 5. RDS(ON) vs. ID Figure 6. Normalized RDS(on) vs. Temperature |
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