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AP70N10CF Datenblatt(PDF) 1 Page - A POWER MICROELECTRONICS

Teilenummer AP70N10CF
Bauteilbeschribung  100V N-Channel Enhancement Mode MOSFET
PDF  8 Pages
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Hersteller  APME [A POWER MICROELECTRONICS]
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AP70N10CPIF
100V N-Channel Enhancement Mode MOSFET
AP70N10CP/F RVE1.0
永源微電子科技有限公司
Description
The AP70N10CP/F is silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency.
General Features
VDS = 100V ID =70A
RDS(ON) < 14mΩ @ VGS=10V （Type：12mΩ）
Application
Uninterruptible Power Supply(UPS)
Power amplifier
motor drive
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP70N10CP
TO-220-3L
AP70N10CP XXX YYYY
1000
AP70N10CF
TO-263-3L
AP70N10CF XXX YYYY
1000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage
100
V
ID@TC=25
℃
Continuous Drain Current VGS @ 10V
70
A
ID@TC=100
℃
Continuous Drain Current, VGS @ 10V
59
A
IDM
Pulsed Drain Current
210
A
VGSS
Gate-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
943
mJ
IAR
Avalanche Current
32
A
EAR
Repetitive Avalanche Energy
36
mJ
PD
Power Dissipation (TC = 25ºC)
200
W
TJ, Tstg
Operating Junction and Storage Temperature Range
-55 to 175
ºC
RthJC
Thermal Resistance, Junction-to-Case
0.75
℃/W
RthJA
Thermal Resistance, Junction-to-Ambient
62.5
℃/W


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