AP70N10CPIF

100V N-Channel Enhancement Mode MOSFET

AP70N10CP/F RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min

Type

Max

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250µA

100

--

--

V

IDSS

Zero Gate Voltage Drain Current

VDS = 100V, VGS = 0V, TJ = 25ºC

--

--

1

μA

VDS = 80V, VGS = 0V, TJ = 125ºC

--

--

100

IGSS

Gate-Source Leakage

VGS = +20V,VDS=0V

--

--

100

nA

VGS=-20V, VDS=0V

--

--

-100

VGS(th)

Gate-Source Threshold Voltage

VDS = VGS, ID = 250µA

3.0

4.0

5.0

V

RDS(on)

Drain-Source On-Resistance (Note3)

VGS = 10V, ID = 28A

--

12

14

mΩ

gfs

Forward Transconductance

VDS = 10V, ID = 28A

85

S

Ciss

Input Capacitance

VGS = 0V,

VDS = 25V, f = 1.0MHz

--

3850

5600

pF

Coss

Output Capacitance

--

610

810

Crss

Reverse Transfer Capacitance

--

260

460

Qg

Total Gate Charge

VDD =50V, ID = 28A, VGS = 0 to

10V

--

60

100

nC

Qgs

Gate-Source Charge

--

15

45

Qgd

Gate-Drain Charge

--

45

80

td(on)

Turn-on Delay Time

VDD = 50V,ID=28A,VGS=10V

RG= 2.5Ω

--

20

40

ns

tr

Turn-on Rise Time

--

28

35

td(off)

Turn-off Delay Time

--

65

100

tf

Turn-off Fall Time

--

15

45

IS

Continuous Body Diode Current

TC = 25ºC

--

--

57

A

ISM

Pulsed Diode Forward Current

--

--

230

VSD

Body Diode Voltage

TJ = 25ºC, ISD = 28A, VGS = 0V

--

--

1.5

V

trr

Reverse Recovery Time

VGS = 0V,IS = 28A, diF/dt =100A

/μs

--

195

300

ns

Qrr

Reverse Recovery Charge

--

107

250

μC

Notes

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2

、The EAS data shows Max. rating . IAS = 58A, VDD = 50V, RG = 25 Ω, Starting TJ = 25 ºC, Starting TJ = 25 ºC

3

、The test condition is Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%

4

、The power dissipation is limited by 150℃ junction temperature

5

、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.