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BTB08 Datenblatt(PDF) 3 Page - Sirectifier Semiconductors

Teilenummer BTB08
Bauteilbeschribung  Discrete Triacs(Non-Isolated/Isolated)
PDF  5 Pages
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Hersteller  SIRECTIFIER [Sirectifier Semiconductors]
Direct Link  http://www.sirectifier.com
Logo SIRECTIFIER - Sirectifier Semiconductors

BTB08 Datenblatt(HTML) 3 Page - Sirectifier Semiconductors

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BTB/BTA08
Discrete Triacs(Non-Isolated/Isolated)
F ig. 1: Maximum power dis s ipation vers us R MS
on-s tate current (full cycle).
F ig. 2-1: R MS on-s tate current vers us cas e
temperature (full cycle).
F ig. 2-2: R MS on-s tate current vers us ambient
temperature (printed circuit board F R 4, copper
thicknes s : 35µm ),full cycle.
F ig. 3: R elative variation of thermal impedance
vers us puls e duration.
F ig.
4:
O n-s tate
characteris tics
(maximum
values ).
F ig. 5:
S urge peak on-s tate current versus
number of cycles.
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
9
10
P (W)
IT (R MS )(A )
0
25
50
75
100
125
0
1
2
3
4
5
6
7
8
9
10
IT (R MS ) (A )
B TA
B T B
T c(° C )
0
25
50
75
100
125
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IT (R MS ) (A )
D PA K
(S =1cm )
2
2
Tamb(° C )
DPA K
(S =0.5cm )
2
1E -3
1E -2
1E -1
1E +0
1E +1
1E +2 5E +2
1E -3
1E -2
1E -1
1E +0
K =[Zth/R th]
Zth(j-c)
Zth(j-a)
tp(s )
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
1
10
100
IT M (A )
T j=25° C
T j=T j max
T j max.
V to = 0.85 V
R d = 50 m
V T M(V )
1
10
100
1000
0
10
20
30
40
50
60
70
80
90
IT S M (A )
Non repetitive
T j initial=25° C
R epetitive
T c=100° C
One cycle
t=20ms
Number of cycles



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