BTB08 datasheet(5/5 Pages) SIRECTIFIER

5 / 5 page

BTB/BTA08

Discrete Triacs(Non-Isolated/Isolated)

F ig. 6: Non-repetitive s urge peak on-s tate

current for a

s inus oidal puls e with width

tp < 10ms, and corres ponding value of I²t.

F ig. 7: R elative variation of gate trigger current,

holding current and latching current versus

junction temperature (typical values ).

F ig. 8-1: R elative variation of critical rate of

decreas e of main current vers us (dV /dt)c (typical

values ). S nubberles s & L ogic L evel Types

F ig. 8-2: R elative variation of critical rate of

decreas e of main current vers us (dV /dt)c (typical

values ). S tandard Types

F ig. 9: R elative variation of critical rate of

decreas e

of main current vers us

junction

temperature.

F ig. 10: DPAK and D2PAK T hermal resis tance

junction to ambient vers us copper s urface under

tab (printed circuit board F R 4, copper thicknes s :

∝m).

0.01

0.10

1.00

10.00

100

1000

tp (ms )

IT S M (A ), I² t (A ² s )

T j initial=25° C

IT S M

I² t

dI/dt limitation:

50A /µs

-40

-20

100

120

140

0.0

0.5

1.0

1.5

2.0

2.5

IG T,IH,IL [T j] / IG T,IH,IL [T j=25° C ]

IG T

IH & IL

T j(° C )

0.1

1.0

10.0

100.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

(dI/dt)c [(dV /dt)c] / S pecified (dI/dt)c

T 835/C W/B W

T W

T 810/S W

(dV /dt)c (V /µs )

0.1

1.0

10.0

100.0

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

(dI/dt)c [(dV /dt)c] / S pecified (dI/dt)c

(dV /dt)c (V /µs )

100

125

(dI/dt)c [T j] / (dI/dt)c [T j s pecified]

T j(° C )

100

R th(j-a) (° C /W)

DPAK

D² PAK

S (cm² )

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