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M58BF008 Datenblatt(PDF) 21 Page - STMicroelectronics |
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M58BF008 Datenblatt(HTML) 21 Page - STMicroelectronics |
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21 / 36 page ![]() 21/36 M58BF008 Table 18. Asynchronous Write AC Characteristics (1) (TA = –40 to 125°C; VDD =5V ± 10% and VDDQ = 3.3V ± 0.3V) Note: 1. See AC Testing Measurement conditions for timi ng measurements. 2. Sampled only, not 100% tested. 3. Time is measured to Status Register Read giving bit b7 = ’1’. Symbol Alt Parameter Min Max Unit tAVAV tWC Write Cycle Time 70 ns tAVWH tAS Address Valid to Write Enable High 70 ns tDVWH tDS Data Valid to Write Enable High 70 ns tELWL tCS Chip Enable Low to Write Enable Low 0 ns tPHWL tPS Reset/Power-down High to Write Enable Low 70 ns tQVVPL (2) Output Valid to VPP out of the range VPP1 or VPPH 0ns tVPHWH (2) tVPS VPP High to Write Enable High 200 ns tWHAX tAH Write Enable High to Address Transition 0 ns tWHDX tDH Write Enable High to Data Transition 0 ns tWHEH tCH Write Enable High to Chip Enable High 0 ns tWHQV1 (3) Write Enable High to Output Valid, Program 10 µs tWHQV2 (3) Write Enable High to Output Valid, Erase 2.1 sec tWHWL tWPH Write Enable High to Write Enable Low 30 ns tWLWH tWP Write Enable Low to Write Enable High 70 ns |
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