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M58BF008 Datenblatt(PDF) 4 Page - STMicroelectronics

Teilenummer M58BF008
Bauteilbeschribung  8 Mbit 256Kb x32, Burst Flash Memory
PDF  36 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M58BF008 Datenblatt(HTML) 4 Page - STMicroelectronics

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A Command Interface decodes the Instructions
written to the memory to access or modify the
memory content, to toggle the enable/disable of
read access to the Overlay block, to toggle the
burst Wrap/No-wrap or to toggle the Synchronous
or Asynchronous Read mode. A Program/Erase
Controller (P/E.C.) executes the algorithms taking
care of the timings necessary for program and
erase operations. The P/E.C. also takes care of
verification to unburden the system microproces-
sor, while a Status Register tracks the status of
each operation.
The following Instructions are executed by the
memory in either Asynchronous or Synchronous
mode.
Access or modify memory content:
- Read Array
- Read or Clear Status Register
- Read Electronic Signature
- Erase Main memory block or Overlay block
- Program Main memory or Overlay memory
- Program Erase Suspend or Resume
Toggle:
– Asynchronous/Synchronous Read
– Overlay Block Read Enable/Disable
– Burst Wrap/No-wrap
The M58BF008 devices are offered in PQFP80
and LBGA80 1.0mm ball pitch packages.
Table 1. Signal Names
A0-A17
Address Inputs
DQ0-DQ31
Data Input/Output
CLK
System Clock
RP
Reset/Power-down
E
Chip Enable
G
Output Enable
GD
Output Disable
W
Write Enable
LBA
Load Burst Address
WR
Write/Read
BAA
Burst Address Advance
VDD
Supply Voltage
VDDQ
Supply Voltage for Input/Output
Buffers
VPP
Program Supply Voltage
VSS
Ground
VSSQ
Input/Output Ground
NC
Not Connected Internally
DU
Don’t Use as Internally Connected
Table 2. Absolute Maximum Ratings (1)
Note: 1. Stresses above those listed in the Table ”Absolute Maximum Ratings” may cause permanent damage to the device.
Symbol
Parameter
Value
Unit
TA
Ambient Operating Temperature
–40 to 125
°C
TBIAS
Temperature Under Bias
–40 to 125
°C
TSTG
Storage Temperature
–55 to 150
°C
VIO
Input Output Voltage
–0.6 to VDDQ +0.6
V
VDD,VDDQ
Supply Voltage
–0.6 to 7
V
VPP
Program Voltage
–0.6 to 13.5
V
When the VPP supply is at VSS this prevents pro-
gramming and erasure of the memory blocks and,
in addition, it prevents reading of the Overlay
block. When the VPP supply is at 5V it enables
both in-system program/erase and read access to
the Overlay block. For a limited time and number
of program/erase cycles the VPP supply may be
raised to 12V to provide fast program and erase
times.



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