KSH112 datasheet(1/2 Pages) ISC

Teilenummer	KSH112

Bauteilbeschribung	Silicon NPN Darlington Power Transistor

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Silicon NPN Darlington Power Transistor

KSH112

www.iscsemi.com

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DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= -100V(Min)

· Collector-Emitter Saturation Voltage

-VCE(sat): -3.0V(Max) @IC= -4A

APPLICATIONS

· Switching Regulators

· Converters

· Power Amplifiers

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

2

A

ICP

Collector Current-Pulse

4

A

PC

Collector Power Dissipation

20

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

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KSH112 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

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