SO2222 datasheet(2/5 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-amb

•

Rth j-SR

•

Thermal Resistance Junction-Ambient

Max

Thermal Resistance Junction-Substrat e

Max

350

290

oC/W

• Mounted on a ceramic substrate area = 15 x 15 x 0.6 mm

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICEX

Collect or Cut-off

Current (VBE =0)

VCE =60 V

VBE =-3 V

for SO2222A

IBEX

Base Cut-off Current

(VBE =0)

VCE =60 V

VBE =-3 V

for SO2222A

ICBO

Collect or Cut-off

Current (IE =0)

VCB =rated VCBO

Tj =150

µA

IEBO

Emitt er Cut-off Current

(IC =0)

VEB =3 V

for SO2222

for SO2222A

V( BR)CEO

∗ Collector-Emitter

Breakdown Volt age

(IB =0)

IC =10 mA

for SO2222

for SO2222A

V(BR)CBO

∗ Collector-Base

Breakdown Volt age

(IB =0)

IC =10

µA

for SO2222

for SO2222A

V(BR)EBO

Emitt er-Base

Breakdown Volt age

(IC =0)

IE =10

µA

for SO2222

for SO2222A

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =150 mA

IB =15 mA

for SO2222

for SO2222A

IC =500 mA

IB =50 mA

for SO2222

for SO2222A

0.4

0.3

1.6

VBE(s at)

∗ Collector-Base

Saturat ion Voltage

IC =150 mA

IB =15 mA

for SO2222

for SO2222A

IC =500 mA

IB =50 mA

for SO2222

for SO2222A

0. 6

1.3

1.2

2.6

hFE

∗

DC Current G ain

IC =0.1 mA

VCE =10 V

IC =1 mA

VCE =10 V

IC =10 mA

VCE =10 V

IC =150 mA

VCE =10 V

IC =150 mA

VCE =1 V

IC =500 mA

VCE =10 V

for SO2222

for SO2222A

100

300

Transit ion F requency

IC =20 mA VCE = 20V f = 100MHz

for SO2222

for SO2222A

250

300

MHz

CCB

Collect or Base

Capacitance

IE =0

VCB =10 V

f = 1 MHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2%

SO2222/SO2222A

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