SO2222 datasheet(3/5 Pages) STMICROELECTRONICS

3 / 5 page

ELECTRICAL CHARACTERISTICS (Continued)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

CEB

Emitt er Base

Capacitance

IE =0

VEB =0.5 V

f =1MHz

for SO2222

for SO2222A

Noise Figure

IC =0.1 mA

VCE =10 V

f = 1 KHz

∆f = 200 Hz RG =1 KΩ

for SO2222A onl y

4dB

hie

∗

Input Impedance

VCE =10 V

IC =1 mA

f = 1 KHz

VCE =10 V

IC =10 mA

f = 1 KHz

for SO2222A onl y

0.25

1.25

Ω

hre

∗

Reverse Voltage Ratio

VCE =10 V

IC =1 mA

f = 1 KHz

VCE =10 V

IC =10 mA

f = 1 KHz

for SO2222A onl y

-4

hfe

∗

Small Signal Current

Gain

VCE =10 V

IC =1 mA

f = 1 KHz

VCE =10 V

IC =10 mA

f = 1 KHz

for SO2222A onl y

300

375

hoe

∗

Output Admittance

VCE =10 V

IC =1 mA

f = 1 KHz

VCE =10 V

IC =10 mA

f = 1 KHz

for SO2222A onl y

200

µS

Delay Time

IC =-150 mA

VBE =-0.5 V

for SO2222A onl y

Rise Time

St orage Time

IC =150 mA

IB1 =-IB2 =15mA

for SO2222A onl y

225

Fall T ime

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2%

SO2222/SO2222A

3/5

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