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HTT1129E Datenblatt(PDF) 4 Page - Renesas Technology Corp

Teilenummer HTT1129E
Bauteilbeschribung  Silicon NPN Epitaxial Twin Transistor
PDF  9 Pages
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Hersteller  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HTT1129E Datenblatt(HTML) 4 Page - Renesas Technology Corp

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HTT1129E
Rev.2.00 Aug 10, 2005 page 4 of 8
Q1 Main Characteristics
20
16
12
8
4
12
3
4
5
6
25
20
15
10
5
0
0.2
0.4
0.6
0.8
1.0
200
100
0
0.1
1.0
10
100
IB = 20 µA
40
µA
60
µA
80
µA
100
µA
120 µA
140 µA
160 µA
VCE = 1 V
VCE = 1 V
0
180 µA
Typical Output Characteristics
Collector to Emitter Voltage VCE (V)
Typical Forward Transfer Characteristics
Base to Emitter Voltage VBE (V)
DC Current Transfer Ratio vs.
Collector Current
Collector Current IC (mA)
Collector to Base Voltage VCB (V)
Reverse Transfer Capacitance vs.
Collector to Base Voltage
0.8
0.6
0.4
0.2
0
0.5
1.0
1.5
2.0
Emitter ground
f = 1 MHz
1.0
20
16
12
8
4
0
12
5
10
20
50
100
Collector Current IC (mA)
Gain Bandwidth Product vs.
Collector Current
f = 1 GHz
VCE = 3 V
VCE = 2 V
VCE = 1 V
5
4
3
2
1
0
12
5
10
20
50
100
Collector Current IC (mA)
Noise Figure vs. Collector Current
VCE = 1 V
f = 900 MHz



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