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VSKCS209/150P Datenblatt(PDF) 2 Page - Vishay Siliconix |
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VSKCS209/150P Datenblatt(HTML) 2 Page - Vishay Siliconix |
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2 / 6 page ![]() www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 94432 2 Revision: 23-Apr-08 VSKCS209/150P Vishay High Power Products Schottky Rectifier, 200 A Note (1) Pulse width < 300 µs, duty cycle < 2 % ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current per module IF(AV) 50 % duty cycle at TC = 107 °C, rectangular waveform 200 A per leg 100 Maximum peak one cycle non-repetitive surge current IFSM 5 µs sine or 3 µs rect. pulse Following any rated load condition and with rated VRRM applied 11 300 10 ms sine or 6 ms rect. pulse 1600 Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1.8 A, L = 10 mH 15 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 µs Frequency limited by TJ maximum VA = 1.5 x VR typical 1A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum forward voltage drop VFM (1) 100 A TJ = 25 °C 0.96 V 200 A 1.21 100 A TJ = 125 °C 0.76 200 A 0.96 Maximum reverse leakage curent IRM (1) TJ = 25 °C VR = Rated VR 6 mA TJ = 125 °C 85 Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 3000 pF Typical series inductance LS From top of terminal hole to mounting plane 7.0 nH Maximum voltage rate of change dV/dt Rated VR 10 000 V/µs RMS insulation voltage VINS 50 Hz, circuit to base, all terminals shorted (1 s) 3500 V THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage temperature range TJ, TStg - 55 to 175 °C Maximum thermal resistance, junction to case per leg RthJC DC operation 0.6 °C/W Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased 0.1 Approximate weight 110 g 4oz. Mounting torque ± 10 % to heatsink 5 Nm busbar 4 Case style JEDEC TO-240AA |
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