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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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BDW23 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BDW23 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDW23/A/B/C DESCRIPTION ·Collector Current -IC= 6A ·High DC Current Gain-hFE= 750(Min)@ IC= 2A ·Complement to Type BDW24/A/B/C APPLICATIONS ·Designed for hammer drivers, audio amplifiers applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDW23 45 BDW23A 60 BDW23B 80 VCER Collector-Emitter Voltage BDW23C 100 V BDW23 45 BDW23A 60 BDW23B 80 VCEO Collector-Emitter Voltage BDW23C 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 8 A IB B Base Current-Continuous 0.2 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc Website：www.iscsemi.cn |
Ähnliche Teilenummer - BDW23 |
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Ähnliche Beschreibung - BDW23 |
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