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BU941ZP Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer BU941ZP
Bauteilbeschribung  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BU941ZP Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
BU941ZP
DESCRIPTION
·Built In Clamping Zener
·High Operating Junction Temperature
APPLICATIONS
·Designed for use in automotive environment as
electronic ignition power actuators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEO
Collector-Emitter Voltage
350
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
30
A
IB
B
Base Current
1
A
IBM
Base Current-Peak
5
A
PC
Collector Power Dissipation
@ TC=25℃
155
W
TJ
Junction Temperature
175
℃
Tstg
Storage Temperature Range
-65~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.97
℃/W
isc Website：www.iscsemi.cn


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