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2SD689 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer 2SD689
Bauteilbeschribung  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD689 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD689
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= 1A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 1A
·Complement to Type 2SB679
APPLICATIONS
·Low frequency medium power amplifier and medium speed
switching applications.
·Pulse motor driver, relay drive and hammer drive applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
1.5
A
PC
Collector Power Dissipation
TC=25℃
10
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn


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