Elektronische Bauelemente

SSG4403

P-Ch Enhancement Mode Power MOSFET

01-June-2005 Rev. A

Page 1 of 4

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

The SSG4403 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation

with gate voltages as low as 2.5V. The device is suitable for use as a load switch or in PWM applications.

FEATURES

Low Gate Charge

Lower On-resistance

Fast Switching Characteristic

PACKAGE DIMENSIONS

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

-30

V

Gate-Source Voltage

±12

V

Continuous Drain Current

3

-6.1

A

Continuous Drain Current

3

-5.1

A

Pulsed Drain Current

1

-60

A

Total Power Dissipation

2.5

W

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

℃

Linear Derating Factor

0.02

W/℃

THERMAL DATA

Parameter

Symbol

Value

Unit

Thermal Resistance Junction-ambient

3

Max.

R

θj-amb

50

℃

/W

0.25

Dimensions in millimeters

6.20

5.80

1.27Typ.

0.35

0.49

4.80

5.00

0

0.100.25

1.35

1.75

0.40

0.90

0.19

0.25

3.80

4.00

0.375 REF

o

8

o

45

o

SOP-8