SSG4403 datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SSG4403

P-Ch Enhancement Mode Power MOSFET

-6.1 A, -30 V, RDS(ON) 50 mΩ

01-June-2005 Rev. A

Page 2 of 4

P-CHANNEL ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

-30

VGS=0, ID=-250uA

Gate Threshold Voltage

VGS(th)

-0.7

-1.3

VDS=VGS, ID=-250uA

Forward Transconductance

gfs

VDS=-5V, ID=-5A

Gate-Source Leakage Current

IGSS

±100

VGS= ±12V

Drain-Source Leakage Current(Tj=25℃)

-1

VDS=-30V, VGS=0

Drain-Source Leakage Current(Tj=55℃)

IDSS

-5

VDS=-24V, VGS=0

VGS=-10V, ID=-6.1A

VGS=-4.5V, ID=-5A

Static Drain-Source On-Resistance

RDS(ON)

117

mΩ

VGS=-2.5 V, ID=-1 A

Total Gate Charge

9.4

Gate-Source Charge

Qgs

Gate-Drain (“Miller”) Change

Qgd

ID=-5 A

VDS=-15 V

VGS=-4.5 V

Turn-on Delay Time

Td(on)

7.6

Rise Time

8.6

Turn-off Delay Time

Td(off)

44.7

Fall Time

16.5

VDS=-15 V

ID=-10 V

RG=6 Ω

RL=2.4 Ω

Input Capacitance

Ciss

940

Output Capacitance

Coss

104

Reverse Transfer Capacitance

Crss

VGS=0 V

VDS=-15 V

f=1.0 MHz

SOURCE-DRAIN DIODE

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Forward On Voltage

VSD

-1.0

IS=-1A, VGS=0 V

Continuous Source Current (Body Diode)

-4.2

Reverse Recovery Time

Trr

22.7

Reverse Recovery Charge

Qrr

15.9

IS = -5A, VGS = 0V, Tj=25°C

dl/dt = 100A/us

Notes:

1. Pulse width limited by Max. junction temperature.

2. Pulse width≦300us, duty cycle≦2%.

3. Mounted on 1 in

2 copper pad of FR4 board; 125 °C/W when mounted on Min. copper pad.

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