Elektronische Bauelemente

STT3981

-1.6 A, -20 V, RDS(ON) 180 m

Ω

P-Channel Enhancement Mode Mos.FET

01-June-2005 Rev. B

Page 1 of 5

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

The STT3981 utilized advance processing techniques to achieve the lowest possible on-resistance, extremely

efficient and cost-effectiveness device. The STT3981 is universally used for all commercial-industrial applications.

FEATURES

Low On-Resistance

Low Gate Charge

PACKAGE DIMENSIONS

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

-20

V

Gate-Source Voltage

±8

V

Continuous Drain Current

3

-1.6

-1.3

A

Pulsed Drain Current

1

-8

A

Power Dissipation

0.8

W

Linear Derating Factor

0.006

W/℃

Operating Junction and Storage Temperature Range

-55 ~ +150

℃

THERMAL DATA

Parameter

Symbol

Ratings

Unit

Thermal Resistance Junction-ambient

150

℃

/W

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

1.10 Max

L

0.45 Ref

A1

0

0.10

L1

0.60 Ref

A2

0.70

1.00

0°

10°

c

0.12 Ref

b

0.30

0.50

D

2.70

3.10

e

0.95 Ref

E

2.60

3.00

e1

1.90 Ref

E1

1.40

1.80