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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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STT3981 Datenblatt(PDF) 5 Page - SeCoS Halbleitertechnologie GmbH |
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STT3981 Datenblatt(HTML) 5 Page - SeCoS Halbleitertechnologie GmbH |
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5 / 5 page  Elektronische Bauelemente STT3981 -1.6 A, -20 V, RDS(ON) 180 m Ω P-Channel Enhancement Mode Mos.FET 01-June-2005 Rev. B Page 5 of 5 Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) 2 1 0.1 0.01 10 3 10 2 1 10 600 10 1 10 4 -- - - Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 100 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 132 C/W 3. TJM TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM - 10 3 10 2 1 10 1 10 4 -- - - 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Foot Square Wave Pulse Duration (sec) 10 |
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