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T15L256A Datenblatt(PDF) 2 Page - Taiwan Memory Technology

Teilenummer T15L256A
Bauteilbeschribung  32K X 8 LOW POWER CMOS STATIC RAM???
PDF  10 Pages
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Hersteller  TMT [Taiwan Memory Technology]
Direct Link  http://www.tmtech.com.tw
Logo TMT - Taiwan Memory Technology

T15L256A Datenblatt(HTML) 2 Page - Taiwan Memory Technology

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TE
CH
tm
T15L256A
Taiwan Memory Technology, Inc. reserves the right
P. 2
Publication Date: APR. 2001
to change products or specifications without notice.
Revision:C
DC CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS
PARAMETER
RATING
UNIT
Supply Voltage to Vss Potential
-0.5 to + 4.6
V
Inputs
to Vss Potential
-0.5 to Vcc +0.5
V
Power Dissipation
0.5
W
Storage Temperature
-60 to +150
°C
RECOMMENDED OPERATING CONDITIONS
PARAMETER
SYM
MIN
TYP
MAX
UNIT
Supply Voltage
Vcc
Typ-5%
3.3
Typ+5%
V
Input Voltage, low
V
IL
-0.3
-
0.8
V
Input Voltage, high
V
IH
2.1
-
Vcc+0.3
V
Ambient Temperature
T
A
0
-
70
°C
TRUTH TABLE
CS
OE
WE
MODE
I/O1- I/O8
Vcc
H
X
X
Not Selected
High-Z
I
SB, I
SB1
L
H
H
Output Disable
High-Z
Icc
L
L
H
Read
Data Out
Icc
L
X
L
Write
Data In
Icc
OPERATING CHARACTERISTICS
(Vcc = 3.3V
± 5%, Vss = 0V, Ta = 0 to 70°C)
PARAMETER
SYM.
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Input Leakage Current
I
LI
Vin=Vss to Vcc
-10
-
+10
uA
Output Leakage Current
I
LO
VI/O=Vss
to Vcc ,
CS =V
IH
or OE= VIH or WE = VIL
-10
-
+10
uA
Output Low Voltage
V
OL
I
OL= + 8.0mA
-
-
0.4
V
Output High Voltage
V
OH
I
OH= - 4.0mA
2.4
-
-
V
-35
-
-
40
mA
Operating Power
Supply Current
Icc
CS =V
IL, I/O=0mA
Cycle = MIN.
Duty = 100%
-70
-
-
35
mA
I
SB
CS =V
IH , Cycle=MIN, Duty=100%
-
-
8
mA
Standby Power
Supply Current
I
SB1
CS ≥ Vcc-0.2V,f=0MHz
-
-
0.8
mA
Note: Typical characteristics are at Vcc = 3.3V, Ta = 25
°C



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