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T15M256A Datenblatt(PDF) 4 Page - Taiwan Memory Technology

Teilenummer T15M256A
Bauteilbeschribung  32K X 8 LOW POWER CMOS STATIC RAM????
PDF  10 Pages
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Hersteller  TMT [Taiwan Memory Technology]
Direct Link  http://www.tmtech.com.tw
Logo TMT - Taiwan Memory Technology

T15M256A Datenblatt(HTML) 4 Page - Taiwan Memory Technology

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TE
CH
tm
T15M256A
Taiwan Memory Technology, Inc. reserves the right
P. 4
Publication Date: APR. 2001
to change products or specifications without notice.
Revision:C
AC CHARACTERISTICS
(Vcc =5V ± 5%, Vss = 0V, Ta = 0 to 70°C)
(1) READ CYCLE
T15M256A-35
T15M256A-70
PARAMETER
SYM.
MIN.
MAX.
MIN.
MAX.
UNIT
Read Cycle Time
tRC
35
-
70
-
ns
Address Access Time
tAA
-
35
-
70
ns
Chip Select Access Time
tACS
-
35
-
70
ns
Output Enable to Output Valid
tAOE
-
25
-
35
ns
Chip Selection to Output in Low Z
tCLZ*
3
-
3
-
ns
Output Enable to Output in Low Z
tOLZ
0
-
0
-
ns
Chip Deselection to Output in High Z
tCHZ*
-
25
-
35
ns
Output Disable to Output in High Z
tOHZ
-
25
-
35
ns
Output Hold from Address Change
tOH
3
-
3
-
ns
* These parameters are sampled but not 100% tested.
(2)WRITE CYCLE
T15M256A-35
T15M256A-70
PARAMETER
SYM.
MIN.
MAX.
MIN.
MAX.
UNIT
Write Cycle Time
tWC
35
-
70
-
ns
Chip Selection to End of Write
tCW
30
-
60
-
ns
Address Valid to End of Write
tAW
30
-
60
-
ns
Address Setup Time
tAS
0
-
0
-
ns
Write Pulse Width
tWP
25
-
50
-
ns
Write Recovery Time
tWR
0
-
0
-
ns
Data Valid to End of Write
tDW
20
-
30
-
ns
Data Hold from End of Write
tDH
0
-
0
-
ns
Write to Output in High Z
tWHZ
-
10
-
25
ns
Output Disable to Output in High Z
tOHZ
-
10
-
25
ns
Output Active from End of Write
tOW
0
-
0
-
ns
* These parameters are sampled but not 100% tested.



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