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AS5C2568C-25L/883C Datenblatt(PDF) 4 Page - Austin Semiconductor

Teilenummer AS5C2568C-25L/883C
Bauteilbeschribung  32K x 8 SRAM SRAM MEMORY ARRAY
PDF  16 Pages
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Hersteller  AUSTIN [Austin Semiconductor]
Direct Link  http://www.austinsemiconductor.com
Logo AUSTIN - Austin Semiconductor

AS5C2568C-25L/883C Datenblatt(HTML) 4 Page - Austin Semiconductor

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SRAM
SRAM
SRAM
SRAM
SRAM
MT5C2568
AS5C2568
MT5C2568 / AS5C2568
Rev. 4.5 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
Austin Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Note 5) (-55oC < T
C < 125
oC or -40oC to +85oC; V
CC = 5.0V +10%)
MIN MAX MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
READ CYCLE
READ cycle time
tRC
12
15
20
25
35
45
ns
Address access time
tAA
12
15
20
25
35
45
ns
Chip enable access time
tACE
12
15
20
25
35
45
ns
Output hold from address change
tOH
23
3
3
3
3
ns
Chip enable to output in Low-Z
tLZCE
23
3
3
3
3
ns
7
Chip disable to output in High-Z
tHZCE
7
10
10
15
35
20
ns
6, 7
Output enable to access time
tAOE
6
8
10
15
20
20
ns
Output enable to output in Low-Z
tLZOE
00
0
0
2
0
ns
Output disable to output in High-Z tHZOE
710
10
15
35
20
ns
6
WRITE CYCLE
WRITE cycle time
tWC
12
15
20
25
35
45
ns
Chip enable to end of write
tCW
10
12
15
20
30
40
ns
Address valid to end of write
tAW
10
12
15
20
30
40
ns
Address setup time
tAS
00
0
0
0
0
ns
Address hold from end of write
tAH
20
0
0
0
0
ns
WRITE pulse width
tWP
10
12
15
20
30
40
ns
Data setup time
tDS
8
10
10
1520
20ns
Data hold time
tDH
00
0
0
0
3
ns
Write disable to output in Low-Z
tLZWE
00
0
3
3
3
ns
7
Write enable to output in High-Z
tHZWE
7
10
10
15
35
20
ns
6, 7
DESCRIPTION
SYM
UNITS NOTES
-12
-15
-45
-20
-25
-35



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