STM8L101F2P3ATR datasheet(39/77 Pages) STMICROELECTRONICS

39 / 77 page

STM8L101xx

Electrical parameters

Doc ID 15275 Rev 7

39/77

Table 14.

Current characteristics

Symbol

Ratings

Max.

Unit

IVDD

Total current into VDD power line (source)

IVSS

Total current out of VSS ground line (sink)

IIO

Output current sunk by IR_TIM pin (with high sink LED

driver capability)

Output current sunk by any other I/O and control pin

Output current source by any I/Os and control pin

-25

IINJ(PIN)

(1)

IINJ(PIN) must never be exceeded. This is implicitly insured if VIN maximum is respected. If VIN maximum

cannot be respected, the injection current must be limited externally to the IINJ(PIN) value. A positive

injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS. For true open-drain pads,

there is no positive injection current, and the corresponding VIN maximum must always be respected.

Injected current on any pin (2)

When several inputs are submitted to a current injection, the maximum

ΣIINJ(PIN) is the absolute sum of the

positive and negative injected currents (instantaneous values). These results are based on

characterization with

ΣIINJ(PIN) maximum current injection on four I/O port pins of the device.

±5

ΣIINJ(PIN) (1)

Total injected current (sum of all I/O and control pins) (2)

±25

Table 15.

Thermal characteristics

Symbol

Ratings

Min

Unit

TSTG

Storage temperature range

-65 to +150

° C

Maximum junction temperature

150

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