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TC7SZU04FE Datenblatt(PDF) 1 Page - Toshiba Semiconductor |
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TC7SZU04FE Datenblatt(HTML) 1 Page - Toshiba Semiconductor |
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1 / 6 page ![]() TC7SZU04FE 2009-09-18 1 TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SZU04FE Inverter (Unbuffered) Features • High output current:±32 mA (min) at VCC = 4.5 V • Low quiescent power: ICC < 1μA (max) at VCC = 5.5 V, Ta = 25°C • Operation voltage range: VCC (opr) = 1.65 to 5.5 V • 5.5-V tolerant input Marking Absolute Maximum Ratings (Ta = 25°C) Pin Assignment (top view) Characteristics Symbol Rating Unit Supply voltage VCC −0.5 to 6 V DC input voltage VIN −0.5 to 6 V DC output voltage VOUT −0.5 to VCC + 0.5 V Input diode current IIK −20 mA Output diode current IOK ±20 (Note 1) mA DC output current IOUT ±50 mA DC VCC/ground current ICC ±50 mA Power dissipation PD 150 mW Storage temperature Tstg −65 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: VOUT < GND, VOUT > VCC Weight : 0.003 g (typ.) Product name J 6 NC 1 IN A 2 GND 3 5 VCC 4 OUT Y (ESV) |
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