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TC7SZU04FE Datenblatt(PDF) 3 Page - Toshiba Semiconductor |
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TC7SZU04FE Datenblatt(HTML) 3 Page - Toshiba Semiconductor |
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3 / 6 page ![]() TC7SZU04FE 2009-09-18 3 Electrical Characteristics DC Characteristics Ta = 25°C Ta = −40 to 85°C Characteristics Symbol Test Condition VCC (V) Min Typ. Max Min Max Unit 1.65 to 1.95 VCC × 0.85 ⎯ ⎯ VCC × 0.85 ⎯ High-level input voltage VIH ⎯ 2.3 to 5.5 VCC × 0.8 ⎯ ⎯ VCC × 0.8 ⎯ V 1.65 to 1.95 ⎯ ⎯ VCC × 0.15 ⎯ VCC × 0.15 Low-level input voltage VIL ⎯ 2.3 to 5.5 ⎯ ⎯ VCC × 0.2 ⎯ VCC × 0.2 V 1.65 1.45 1.64 ⎯ 1.45 ⎯ 2.3 2.1 2.3 ⎯ 2.1 ⎯ 3.0 2.7 3.0 ⎯ 2.7 ⎯ VIN = VIL IOH = −100 μA 4.5 4.0 4.4 ⎯ 4.0 ⎯ IOH = −4 mA 1.65 1.29 1.52 ⎯ 1.29 ⎯ IOH = −8 mA 2.3 1.9 2.14 ⎯ 1.9 ⎯ IOH = −12 mA 3.0 2.4 2.75 ⎯ 2.4 ⎯ IOH = −16 mA 3.0 2.3 2.61 ⎯ 2.3 ⎯ High-level output voltage VOH VIN = GND IOH = −32 mA 4.5 3.8 4.13 ⎯ 3.8 ⎯ V 1.65 ⎯ 0 0.2 ⎯ 0.2 2.3 ⎯ 0 0.2 ⎯ 0.2 3.0 ⎯ 0 0.3 ⎯ 0.3 VIN = VIH IOL = 100 μA 4.5 ⎯ 0 0.5 ⎯ 0.5 IOL = 4 mA 1.65 ⎯ 0.08 0.24 ⎯ 0.24 IOL = 8 mA 2.3 ⎯ 0.1 0.3 ⎯ 0.3 IOL = 12 mA 3.0 ⎯ 0.17 0.4 ⎯ 0.4 IOL = 16 mA 3.0 ⎯ 0.25 0.55 ⎯ 0.55 Low-level output voltage VOL VIN = VCC IOH = 32 mA 4.5 ⎯ 0.26 0.55 ⎯ 0.55 V Input leakage current IIN VIN = 5.5 V or GND 0 to 5.5 ⎯ ⎯ ±1 ⎯ ±10 μA Quiescent supply current ICC VIN = VCC or GND 5.5 ⎯ ⎯ 1 ⎯ 10 μA |
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