BUJD103AD datasheet(8/14 Pages) NXP

Teilenummer	BUJD103AD

Bauteilbeschribung	NPN power transistor with integrated diode

PDF	14 Pages

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Hersteller	NXP [NXP Semiconductors]

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8 / 14 page

BUJD103AD_2

Product data sheet

Rev. 02 — 6 October 2009

8 of 14

NXP Semiconductors

BUJD103AD

NPN power transistor with integrated diode

Fig 9.

Collector-emitter saturation voltage as a

function of base current; typical values

Fig 10. Collector-emitter saturation voltage as a

function of collector current; typical values

Fig 11. Base-emitter saturation voltage as a function of

collector current; typical values

Fig 12. DC current gain as a function of collector

current; typical values

IB (A)

10−2

10−1

001aab995

0.8

1.2

0.4

1.6

2.0

VCEsat

(V)

IC = 1 A

2 A 3 A

4 A

001aab997

VCEsat

(V)

IC (A)

10−1

0.2

0.1

0.3

0.4

0.5

001aab996

VBEsat

(V)

IC (A)

10−1

0.6

0.8

0.2

0.4

1.0

1.2

1.4

001aab994

IC (A)

10−2

10−1

102

hFE

VCE = 5 V

1 V

Tj = 25 °C

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