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BUJD103AD Datenblatt(PDF) 9 Page - NXP Semiconductors |
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BUJD103AD Datenblatt(HTML) 9 Page - NXP Semiconductors |
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9 / 14 page ![]() BUJD103AD_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 6 October 2009 9 of 14 NXP Semiconductors BUJD103AD NPN power transistor with integrated diode Fig 13. Test circuit for resistive load switching Fig 14. Switching times waveforms for resistive load Fig 15. Test circuit for inductive load switching Fig 16. Switching times waveforms for inductive load 001aab989 tp RB VIM 0 RL DUT VCC T 001aab990 IC IB 10 % 10 % 90 % 90 % ton toff ts tf t t IBon −IBoff ICon tr ≤ 30 ns 001aab991 VCC LC DUT LB IBon VBB 001aab992 IC IB 90 % toff IBon ts tf t t −IBoff ICon 10 % |
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