◎ SEMIHOW REV.A0,Dec 2005

2

1

3

BV

R

I

 Originative New Design

 Superior Avalanche Rugged Technology

 Robust Gate Oxide Technology

 Very Low Intrinsic Capacitances

 Excellent Switching Characteristics

 Unrivalled Gate Charge : 18 nC (Typ.)

 Extended Safe Operating Area

 Lower R

 100% Avalanche Tested

Thermal Resistance Characteristics

FEATURES

Absolute Maximum Ratings

T

HFS830

500V N-Channel MOSFET

Symbol

Parameter

Value

Units

V

DSS

Drain-Source Voltage

500

V

I

D

Drain Current

– Continuous (T

4.5*

A

Drain Current

– Continuous (T

2.9*

A

I

DM

Drain Current

– Pulsed

(Note 1)

18*

A

V

GS

Gate-Source Voltage

±30

V

E

AS

Single Pulsed Avalanche Energy

(Note 2)

270

mJ

I

AR

Avalanche Current

(Note 1)

4.5

A

E

AR

Repetitive Avalanche Energy

(Note 1)

7.3

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

5.5

V/ns

P

D

Power Dissipation (T

- Derate above 25℃

38

W

0.3

W/℃

T

Operating and Storage Temperature Range

-55 to +150

℃

T

L

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

℃

Symbol

Parameter

Typ.

Max.

Units

Junction-to-Case

--

3.31

℃/W

Junction-to-Ambient

--

62.5

Dec 2005

TO-220F

1.Gate 2. Drain 3. Source

* Drain current limited by maximum junction temperature