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HFS830 Datenblatt(PDF) 3 Page - SemiHow Co.,Ltd.

Teilenummer HFS830
Bauteilbeschribung  500V N-Channel MOSFET
PDF  7 Pages
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Hersteller  SEMIHOW [SemiHow Co.,Ltd.]
Direct Link  http://www.semihow.com
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HFS830 Datenblatt(HTML) 3 Page - SemiHow Co.,Ltd.

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◎ SEMIHOW REV.A0,Dec 2005
※ Note :
1. VDS=40V
2. 250㎲ Pulse Test
150℃
25℃
-55℃
101
100
10-1 2
4
6
8
10
V
GS, Gate-Source Voltage [V]
V
DS, Drain-Source Voltage [V]
101
100
10-1
10-1
100
101
※ Note :
1. 250㎲ Pulse Test
2. TC=25℃
V
Top:
15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
Bottem
5.0V
V
SD, Source-Drain Voltage [V]
※ Note :
1. VGS=0V
2. 250㎲ Pulse Test
150℃
25℃
0.2
0.4
0.6
0.8
1.0
1.2
1.4
101
100
10-1
I
D, Drain Current [A]
6
4
3
2
1
0
0
3
6
9
12
15
V
GS=20V
V
GS=10V
※ Note : T
J=25℃
Typical Characteristics
10
-1
10
0
10
1
0
200
400
600
800
1000
1200
1400
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = Cds + Cgd
C
rss = Cgd
* Note ;
1. V
GS = 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
V
DS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
0
4
8
12
16
20
0
2
4
6
8
10
12
V
DS = 250V
V
DS = 100V
V
DS = 400V
∗ Note : I
D = 4.5A
Q
G, Total Gate Charge [nC]



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