Notes:

1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.

2.Pulse width <300us, duty cycle <2%.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Drain-source breakdown voltage

60

-

-

V

Breakdown voltage temperature coefficient

-

0.07

-

V/°C

Static drain-source on-resistance

-

-

12

m

Ω

-

-

15

m

Ω

Gate threshold voltage

1

-

3

V

Forward transconductance

-

50

-

S

Drain-source leakage current

V

-

-

10

uA

-

-

100

uA

Gate-source leakage current

-

-

±100

nA

Total gate charge

2

-

43

69

nC

Gate-source charge

-

8

-

nC

Gate-drain ("Miller") charge

-

31

-

nC

Turn-on delay time

2

-

14

-

ns

Rise time

-

48

-

ns

Turn-off delay time

-

42

-

ns

Fall time

-

67

-

ns

Input capacitance

-

3180 5100

pF

Output capacitance

-

495

-

pF

Reverse transfer capacitance

f=1.0MHz

-

460

-

pF

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Forward voltage

2

-

-

1.2

V

Reverse-recovery time

-

45

-

ns

Reverse-recovery charge

dI/dt=100A/µs

-

40

-

nC

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2 of 6

SSM9974GP,S

5/12/2006 Rev.3.1

Rg

Gate Resistance

f=1.0MHz

-

1

1.5

Ω