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SSM9974GS Datenblatt(PDF) 1 Page - Silicon Standard Corp. |
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SSM9974GS Datenblatt(HTML) 1 Page - Silicon Standard Corp. |
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1 / 6 page ![]() www.SiliconStandard.com 1 of 6 N-channel Enhancement-mode Power MOSFET BVDSS 60V RDS(ON) 12m Ω I D 72A The SSM9974 acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC Pb-free; RoHS-compliant TO-220 PRODUCT SUMMARY DESCRIPTION Notes: 1.Pulse width must be limited to avoid exceeding the safe operating area. 2.Pulse width <300us, duty cycle <2%. converters and general load-switching circuits. The SSM9974GS is in a TO-263 package, which is widely used for commercial and industrial surface-mount applications. The through-hole version, the SSM9974GP in TO-220, is available for vertical mounting, where a small footprint and TO-263 (D 2PAK) G D S TO-263 (suffix S) G D S TO-220 (suffix P) is required on the board, and/or an external heatsink is to be attached. These devices are manufactured with an advanced process, providing improved on-resistance and switching performance. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Units VDS VGS V ID IDM PD W/°C TSTG TJ Symbol Parameter Value Units RΘJC Maximum thermal resistance, junction-case 1.2 °C/W RΘJA Maximum thermal resistance, junction-ambient 62 °C/W Drain-source voltage 60 V Gate-source voltage ±20 Continuous drain current, TC = 25°C 72 A TC = 100°C 46 A Pulsed drain current 1 300 A Total power dissipation, TC = 25°C 104 W -55 to 150 °C Operating junction temperature range -55 to 150 °C Linear derating factor 0.8 THERMAL CHARACTERISTICS Storage temperature range SSM9974GP,S 5/12/2006 Rev.3.1 |
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Ähnliche Beschreibung - SSM9974GS |
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